Infineon IPB065N15N3GATMA1 OptiMOS 5 Power MOSFET: Key Features and Applications

The relentless pursuit of higher efficiency and power density in modern electronics has made the choice of switching components more critical than ever. The Infineon IPB065N15N3GATMA1, a member of the advanced OptiMOS™ 5 150 V family, stands out as a premier solution for designers tackling these challenges. This N-channel power MOSFET is engineered to deliver exceptional performance in a wide array of demanding applications.

Key Features

At the heart of this MOSFET's superiority is its groundbreaking technology, which achieves a remarkable balance between low losses and high robustness.

Exceptional Efficiency: The device boasts an extremely low typical on-state resistance (R DS(on)) of just 6.5 mΩ at 10 V. This minimized resistance directly translates to reduced conduction losses, leading to higher overall system efficiency and less heat generation.

Superior Switching Performance: Optimized for fast switching, it features low gate charge (Q G) and low output charge (Q oss). This allows for shorter switching times, which reduces switching losses and enables operation at higher frequencies. This is paramount for shrinking the size of magnetic components like inductors and transformers.

Enhanced Ruggedness: The IPB065N15N3GATMA1 is designed with a strong focus on reliability. It offers an avalanche ruggedness rating, ensuring it can handle unexpected voltage spikes and harsh transient conditions without failure.

Optimized Package: Housed in the PQFN 8x8 mm package (TLF package code), this MOSFET offers an excellent power-to-size ratio. The bottom-side cooling capability ensures optimal thermal performance by allowing heat to be efficiently transferred directly to the PCB and an external heatsink, maximizing power dissipation.

Primary Applications

The combination of high voltage rating, low losses, and fast switching speed makes this MOSFET incredibly versatile. Its primary applications include:

DC-DC Conversion: It is an ideal choice for high-efficiency synchronous rectification in switched-mode power supplies (SMPS), telecom bricks, and server power units.

Motor Drive and Control: The device excels in driving brushed and brushless DC motors for industrial automation, robotics, and high-performance power tools, where efficiency and control are key.

Solar Energy Systems: It is perfectly suited for use in solar inverters, particularly in maximum power point tracking (MPPT) charge controllers, helping to maximize energy harvest from photovoltaic panels.

Battery Management Systems (BMS): Its low R DS(on) minimizes voltage drop and power loss in protection switches and management circuits for high-current battery packs in electric vehicles, energy storage systems, and UPS units.

ICGOODFIND: The Infineon IPB065N15N3GATMA1 OptiMOS™ 5 MOSFET is a benchmark for performance in its voltage class. By offering a superior blend of minimal switching and conduction losses, high ruggedness, and a thermally efficient package, it provides engineers with a critical component to push the boundaries of power density and efficiency in their next-generation designs.

Keywords: OptiMOS™ 5, Low R DS(on), Synchronous Rectification, High Efficiency, Avalanche Rugged.