Infineon BSO200N03 N-Channel MOSFET: Datasheet, Application Circuits, and Technical Specifications
The Infineon BSO200N03 is a state-of-the-art N-Channel power MOSFET engineered in OptiMOS™ 3 technology, representing a significant advancement in power management for space-constrained, high-efficiency applications. This surface-mount device (SMD) is packaged in the compact SuperSO8, offering an exceptional blend of low on-state resistance and high current handling capability, making it a premier choice for modern switching power supplies and motor control systems.
Technical Specifications and Key Features
The core of the BSO200N03's performance lies in its impressive electrical characteristics. It is rated for a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of up to 200 A at 25°C, a remarkably high value for its package size. This is made possible by its extremely low typical on-state resistance (RDS(on)) of just 1.0 mΩ at 10 V gate drive. This low resistance directly translates to reduced conduction losses, higher overall system efficiency, and lower heat generation.
Key specifications include:
Gate Threshold Voltage (VGS(th)): Typically 2.1 V
Total Gate Charge (Qg): Typically 150 nC
Avalanche Energy Rated (EAS): Robustness against inductive switching events.
Package: SuperSO8 (SSO-8), optimized for excellent thermal performance and power dissipation.
Application Circuits
The BSO200N03 is predominantly used as a high-frequency switch in synchronous rectification circuits within switch-mode power supplies (SMPS), such as server and telecom power units. Its fast switching speed and low gate charge minimize switching losses, which is critical for achieving high efficiency at elevated frequencies.
A common application is in a synchronous buck converter, the workhorse for point-of-load (POL) voltage regulation. In this circuit, the BSO200N03 is typically used as the low-side (synchronous) MOSFET. Its ultra-low RDS(on) is crucial here, as it conducts current for a significant portion of the switching cycle, and any resistance would lead to substantial power loss. Furthermore, its robust characteristics make it suitable for motor drive and control circuits in automotive and industrial environments, where it can efficiently handle high pulsed currents to drive DC motors or solenoids.
Datasheet Overview
The official Infineon datasheet is an essential resource for any design engineer. It provides comprehensive information beyond the key specs, including:
Absolute Maximum Ratings: The critical limits for safe operation.
Static and Dynamic Characteristics: Detailed graphs showing the relationship between RDS(on), gate charge, and temperature.
Switching Performance: Test circuits and waveforms.
Thermal Characteristics: Key parameters like junction-to-ambient and junction-to-case thermal resistance, vital for designing an adequate cooling solution.
Package Outline and Footprint: Precise mechanical drawings for PCB layout.
The Infineon BSO200N03 stands out as a benchmark for high-current, low-voltage MOSFETs in a compact package. Its industry-leading low RDS(on) and immense 200 A current rating make it an indispensable component for designers pushing the limits of power density and efficiency in applications like advanced computing, data centers, and automotive systems. When selecting a MOSFET for a demanding power stage, the BSO200N03 offers a compelling blend of performance and reliability.
Keywords: Power MOSFET, Low RDS(on), Synchronous Rectification, High Current Switching, OptiMOS™ 3
