Infineon IPD380P06NM: High-Performance N-Channel Power MOSFET for Advanced Automotive and Industrial Applications

The relentless drive towards higher efficiency, greater power density, and enhanced reliability in electronic systems has made the choice of switching components more critical than ever. In this demanding landscape, the Infineon IPD380P06NM stands out as a premier N-Channel power MOSFET engineered to meet the stringent requirements of next-generation automotive and industrial applications.

This MOSFET is built upon Infineon's advanced OptiMOS™ 5 technology, a platform renowned for its exceptional balance of low switching losses and low on-state resistance. The IPD380P06NM exemplifies this with an impressively low typical R DS(on) of just 3.8 mΩ at a gate-source voltage of 10 V. This ultra-low resistance is pivotal in minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller form factors by simplifying thermal management solutions.

A key strength of the IPD380P06NM is its robustness and qualification for automotive environments. It is AEC-Q101 qualified, ensuring it meets the rigorous quality and reliability standards demanded by the automotive industry. This makes it an ideal solution for a wide array of applications, including electric power steering (EPS), braking systems, engine management, and DC-DC converters in 48V mild-hybrid systems. Its ability to operate reliably under the hood, where temperatures can fluctuate wildly, is a testament to its robust design.

Beyond the automotive sector, the device excels in challenging industrial settings. Its high performance is crucial for motor control drives, solar inverters, and high-frequency switched-mode power supplies (SMPS). The MOSFET's low gate charge (Q G) and excellent figure of merit (FOM) ensure fast switching speeds, which are essential for increasing the operating frequency of power supplies and reducing the size of magnetic components.

The package itself, the SuperSO8, contributes significantly to its performance. This package offers a very low parasitic inductance and an efficient cooling capability thanks to its exposed die pad, allowing for better heat dissipation and improved power cycling capability compared to standard SO-8 packages.

ICGOOODFIND: The Infineon IPD380P06NM is a top-tier power MOSFET that delivers a superior combination of ultra-low R DS(on), high switching speed, and automotive-grade reliability. It is an optimal component for designers aiming to push the boundaries of efficiency and power density in cutting-edge automotive and industrial power systems.

Keywords: AEC-Q101 Qualified, Ultra-Low R DS(on), OptiMOS™ 5 Technology, Automotive Applications, Power Efficiency.