Infineon IPG16N10S4L-61A 100V N-Channel MOSFET: Powering the Next Generation of High-Efficiency Systems

In the relentless pursuit of higher efficiency and power density across industries like automotive, industrial automation, and consumer electronics, the choice of switching components is paramount. The Infineon IPG16N10S4L-61A 100V N-Channel MOSFET stands out as a premier solution, engineered to meet the rigorous demands of modern power conversion systems, from DC-DC converters and motor drives to sophisticated SMPS (Switched-Mode Power Supplies).

This MOSFET is a cornerstone of efficiency, primarily due to its exceptionally low on-state resistance (R DS(on)) of just 6.1 mΩ (max. at V GS = 10 V). This critical parameter is a major determinant of conduction losses; the lower the R DS(on), the less energy is wasted as heat when the device is fully switched on. This translates directly into cooler operation, higher overall system efficiency, and the potential for more compact designs by reducing the need for extensive heat sinking.

Beyond its impressive R DS(on), the IPG16N10S4L-61A is characterized by its superior switching performance. The device features low gate charge (Q G) and low output charge (Q OSS), which are essential for achieving high-frequency operation. Faster switching speeds minimize transition losses, another significant source of energy dissipation in power conversion circuits. This allows designers to push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors, thereby increasing power density.

Housed in a robust PG-TO263-3 (D2PAK) package, this MOSFET offers an excellent balance between size and power handling capability. The package is designed for effective thermal management, providing a low thermal resistance path to dissipate heat into the PCB or an external heatsink, ensuring reliable performance even under strenuous conditions.

Furthermore, the 100V drain-source voltage rating provides a comfortable safety margin for 48V bus systems and 24V industrial applications, protecting against voltage spikes and ensuring long-term reliability. Its avalanche ruggedness guarantees that it can withstand certain levels of energy during unclamped inductive switching (UIS) events, a common concern in inductive load applications.

ICGOOODFIND: The Infineon IPG16N10S4L-61A is a highly optimized power MOSFET that excels in balancing low conduction losses, fast switching capability, and robust thermal performance. It is an ideal choice for designers aiming to maximize efficiency and power density in a wide array of demanding power conversion applications.

Keywords: Power MOSFET, High Efficiency, Low RDS(on), Power Conversion, Switching Performance.