Infineon IPB015N08N5ATMA1 OptiMOS 5 Power MOSFET: Datasheet, Application, and Features

The Infineon IPB015N08N5ATMA1 is a state-of-the-art N-channel power MOSFET belonging to the company's advanced OptiMOS™ 5 80 V technology family. Engineered for exceptional efficiency and robustness, this component is designed to meet the demanding requirements of modern power conversion systems. Its combination of low on-state resistance and high switching performance makes it a premier choice for a wide array of industrial and automotive applications.

Key Features and Benefits

The standout characteristic of the IPB015N08N5ATMA1 is its extremely low typical on-state resistance (R DS(on)) of just 1.5 mΩ at 10 V. This minimal resistance is crucial for reducing conduction losses, which directly translates to higher system efficiency and lower power dissipation. Furthermore, the device offers outstanding switching performance, enabling designers to increase the switching frequency of their circuits. This allows for the use of smaller, lighter passive components like inductors and transformers, leading to more compact and cost-effective power supply designs.

The MOSFET is housed in an TO-Leadless (TOLL) package, which is optimized for superior thermal and electrical performance. The package's low parasitic inductance is critical for minimizing voltage spikes in high-speed switching applications. Its small footprint also saves valuable PCB space, making it ideal for high-power-density designs. The device is also 100% avalanche tested, ensuring ruggedness and reliability in harsh operating conditions.

Primary Applications

The IPB015N08N5ATMA1 is particularly suited for high-current DC-DC conversion and motor control circuits. Its primary application areas include:

Server & Telecom Power Supplies: Where efficiency and power density are paramount.

Industrial Motor Drives and Robotics: Providing robust and reliable switching for controlling motors.

Solar Inverters and Energy Storage Systems: Contributing to high efficiency in power conversion stages.

Battery Management Systems (BMS): Especially for high-current discharge and protection circuits.

Automotive Systems: Such as 48V board net platforms and other high-power automotive applications.

Datasheet Overview

The official datasheet is an essential resource for any design-in process. It provides comprehensive information including:

Absolute Maximum Ratings: Defining the limits for drain-source voltage (80 V), continuous drain current, and power dissipation.

Electrical Characteristics: Detailed tables and graphs for R DS(on), gate charge (Q G), and capacitances across various conditions.

Switching Characteristics: Including turn-on and turn-off delay and rise/fall times.

Safe Operating Area (SOA) Graphs: Illustrating the current and voltage boundaries within which the device can operate safely.

Thermal Characteristics: Specifying junction-to-ambient and junction-to-case thermal resistance.

ICGOODFIND: The Infineon IPB015N08N5ATMA1 OptiMOS 5 MOSFET sets a high benchmark for power switching components. Its industry-leading low R DS(on) in the compact TOLL package delivers a compelling blend of maximum efficiency, high power density, and proven reliability, making it an excellent solution for the next generation of efficient power electronics.

Keywords: OptiMOS 5, Low RDS(on), Power MOSFET, High Efficiency, TOLL Package.