Infineon IPN50R950CE: A High-Performance 950V CoolMOS™ Power Transistor for Demanding Applications

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon's IPN50R950CE, a 950V superjunction MOSFET (CoolMOS™) that sets a new benchmark for high-performance power conversion in the most demanding applications.

Engineered with Infineon's advanced superjunction technology, the IPN50R950CE is specifically designed to handle high voltages while minimizing switching and conduction losses. Its exceptionally high blocking voltage of 950V provides a robust safety margin, making it an ideal choice for systems operating from unstable or harsh line voltages, such as in industrial settings or certain geographic regions. This high voltage capability is crucial for applications like server and telecom SMPS (Switched-Mode Power Supplies), where superior avalanche ruggedness ensures operational stability and long-term reliability.

A key metric for any power transistor is its on-state resistance, RDS(on). The IPN50R950CE boasts an ultra-low typical RDS(on) of just 50 mΩ, which directly translates to reduced conduction losses. This efficiency gain is paramount for minimizing heat generation, which in turn allows for smaller heatsinks and more compact system designs. The result is a significant boost in overall power density.

Beyond its static performance, the device excels in dynamic operation. It features outstanding switching characteristics, enabling higher switching frequencies. This allows designers to shrink the size of passive components like inductors and transformers, further contributing to a reduction in the overall form factor and weight of the power supply unit. The fast switching speed, combined with its low gate charge (QG), ensures that driving the MOSFET remains efficient, reducing stress on the gate driver circuitry.

The IPN50R950CE is not just about raw performance; it is also designed for robustness. Its integrated fast body diode enhances its reliability in hard-switching topologies, such as power factor correction (PFC) stages, by improving reverse recovery behavior. This integration simplifies design and increases the system's resilience against voltage spikes and other transient events.

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Keywords: CoolMOS™, High Voltage, Ultra-Low RDS(on), Power Density, Switching Performance